UV Laserdioden
Ultec is pioneering a new frontier of ultra-wide band gap semiconductors.
Following gallium nitride (GaN)—the breakthrough material behind innovations like blue LEDs and transistors for compact AC adapters—aluminum nitride (AlN), an ultra-wide band gap semiconductor, is emerging as the next-generation material capturing global attention.
At the forefront of ultra-wide band gap semiconductor innovation, Ultec specialize in AlN-based device technologies, a field where Ultec has developed strong expertise. AlN offers exceptional potential for deep ultraviolet optoelectronics and next-generation power devices.
Leveraging Ultec’s expertise in AlN, they are developing groundbreaking devices that will shape the future of technology.
Ultec devices currently lasing wavelengths from 265 nm to 295 nm, with development underway to extend the range up to 325 nm
